1/5 STPS30150CT/cw/cfp ? august 2002 - ed: 5d high voltage power schottky rectifier i f(av) 2x15a v rrm 150 v tj 175c v f (max) 0.75 v main product characteristics n high junction temperature capability n good trade off between leakage current and for- ward voltage drop n low leakage current n insulated package: to-220fpab insulating voltage: 2000v dc capacitance: 45pf features and benefits dual center tap schottky rectifier designed for high frequency switched mode power sup- plies. description to-220ab STPS30150CT a1 a2 k symbol parameter value unit v rrm repetitive peak reverse voltage 150 v i f(rms) rms forward current 30 a i f(av) average forward current d = 0.5 to-220fpab tc = 110c per diode per device 15 a to-220ab tc = 155c to-247 30 i fsm surge non repetitive forward current tp = 10 ms sinusoidal 220 a t stg storage temperature range - 65 to + 175 c tj maximum operating junction temperature * 175 c dv/dt critical rate of rise of reverse voltage 10000 v/ m s absolute ratings (limiting values, per diode) to-247 stps30150cw a1 k a2 a1 a2 k a1 a2 k to-220fpab stps30150cfp *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink
STPS30150CT/cw/cfp 2/5 symbol parameter value unit r th (j-c) junction to case to-220fpab per diode total 4 3.3 c/w to-220ab per diode total 1.6 0.85 to-247 per diode total 1.5 0.8 r th (c) to-220fpab coupling 2.6 to-220ab coupling 0.1 to-247 coupling 0.1 thermal resistances symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25c v r =v rrm 6.5 m a tj = 125c 8 ma v f ** forward voltage drop tj = 25 ci f = 15 a 0.92 v tj = 125c i f = 15 a 0.69 0.75 tj=25 ci f =30a 1 tj = 125c i f = 30 a 0.8 0.86 pulse test : * t p=5ms, d <2% ** tp = 380 m s, d <2% to evaluate the conduction losses use the following equation: p=0.64xi f(av) + 0.0073 i f 2 (rms) static electrical characteristics (per diode) when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) 0 1 2 3 4 5 6 7 8 9 101112131415161718 0 2 4 6 8 10 12 14 if(av) (a) pf(av)(w) d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 t d =tp/t tp fig. 1: average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16 18 tamb(c) if(av)(a) rth(j-a)=15c/w rth(j-a)=rth(j-c) to-220fpab to-220ab/to-247/i2pak/d2pak t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d = 0.5, per diode).
STPS30150CT/cw/cfp 3/5 1e-3 1e-2 1e-1 1e+0 0 50 100 150 200 250 t(s) im(a) tc=50c tc=75c tc=125c i m t d =0.5 fig. 3-1: non repetitive surge peak forward cur- rent versus overload duration (maximum values, per diode). 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) t d =tp/t tp d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4-1: relative variation of thermal impedance junction to case versus pulse duration (per diode) 0 25 50 75 100 125 150 1e-1 1e+0 1e+1 1e+2 1e+3 1e+4 1e+5 vr(v) ir(a) tj=125c tj=25c tj=150c tj=100c tj=175c fig. 5: reverse leakage current versus reverse voltage applied (typical values, per diode). 1 2 5 10 20 50 100 200 10 100 1000 vr(v) c(pf) f=1mhz tj=25c fig. 6: junction capacitance versus reverse voltage applied (typical values, per diode). 1e-3 1e-2 1e-1 1e+0 0 20 40 60 80 100 120 140 t(s) im(a) tc=25c tc=125c tc=75c i m t d =0.5 fig. 3-2: non repetitive surge peak forward current versus overload duration (maximum values, per diode) (to-220fpab only). 1e-3 1e-2 1e-1 1e+0 1e+1 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) t d =tp/t tp d = 0.5 d = 0.2 d = 0.1 single pulse fig. 4-2: relative variation of thermal impedance junction to case versus pulse duration. (to-220fpab)
STPS30150CT/cw/cfp 4/5 package mechanical data to-220ab m h2 l2 a c l4 f1(x2) d f2 f g l9 l6 l7 l5 g1 e dia optional ref. dimensions millimeters inches min. max. min. max. a 4.30 4.60 0.169 0.181 c 1.22 1.32 0.048 0.052 d 2.40 2.72 0.094 0.107 e 0.33 0.70 0.013 0.028 f 0.61 0.93 0.024 0.037 f1 1.14 1.70 0.045 0.067 f2 1.14 1.70 0.045 0.067 g 4.95 5.15 0.195 0.202 g1 2.40 2.70 0.094 0.106 h2 10.00 10.40 0.394 0.409 l2 16.00 typ. 0.630 typ. l4 13.00 14.00 0.512 0.551 l5 2.65 2.95 0.104 0.116 l6 14.80 15.75 0.583 0.620 l7 6.20 6.60 0.244 0.260 l9 3.40 3.94 0.134 0.155 m 2.60 typ. 0.102 typ. dia. 3.75 3.89 0.148 0.153 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.0 10.0 100.0 vfm(v) ifm(a) tj=25c tj=125c tj=125c typical values fig. 7: forward voltage drop versus forward current (maximum values, per diode).
STPS30150CT/cw/cfp 5/7 package mechanical data to-220fpab h l3 l2 l4 l6 g g1 f f1 l5 d e l7 a b dia f2 ref. dimensions millimeters inches min. max. min. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.70 0.018 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.70 0.045 0.067 f2 1.15 1.70 0.045 0.067 g 4.95 5.20 0.195 0.205 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 typ. 0.63 typ. l3 28.6 30.6 1.126 1.205 l4 9.8 10.6 0.386 0.417 l5 2.9 3.6 0.114 0.142 l6 15.9 16.4 0.626 0.646 l7 9.00 9.30 0.354 0.366 dia. 3.00 3.20 0.118 0.126
STPS30150CT/cw/cfp 6/5 package mechanical data to-247 f2 f1 v2 l4 l2 l1 l3 d l l5 me h v v a dia. f3 f4 g = = f(x3) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f1 3.00 0.118 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 f4 3.00 3.40 0.118 0.133 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143 ordering type marking package weight base qty delivery mode STPS30150CT STPS30150CT to-220ab 2 g 50 tube stps30150cfp stps30150cfp to-220fpab 1.9 g 50 tube stps30150cw stps30150cw to-247 4.4 g 30 tube n epoxy meets ul94, v0 n cooling method : c n recommended torque value : 0.8m.n n maximum torque value : 1.0m.n
STPS30150CT/cw/cfp 7/7 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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